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TSM2N60S

Taiwan Semiconductor Company
Part Number TSM2N60S
Manufacturer Taiwan Semiconductor Company
Description 600V N-Channel Power MOSFET
Published Mar 5, 2010
Detailed Description TSM2N60S 600V N-Channel Power MOSFET SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source www.DataSheet4U.com PRODUCT SUM...
Datasheet PDF File TSM2N60S PDF File

TSM2N60S
TSM2N60S

Overview
TSM2N60S 600V N-Channel Power MOSFET SOT-223 Pin Definition: 1.
Gate 2.
Drain 3.
Source www.
DataSheet4U.
com PRODUCT SUMMARY VDS (V) 600 RDS(on)(Ω) 5 @ VGS =10V ID (A) 0.
6 General Description The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.
The new energy efficient design also offers a drain- to-source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for...


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