CYStech Electronics Corp.
High Voltage
NPN Epitaxial Planar
Transistor
BTC4505M3
Spec.
No.
: C210M3 Issued Date : 2003.
05.
15 Revised Date :2014.
07.
24 Page No.
: 1/6
Features
High breakdown voltage, BVCEO (min)=400V.
Low saturation voltage, typically VCE(sat) =0.
14V at IC/IB=50mA/5mA.
Complementary to BTA1759M3.
Pb-free lead plating and halogen-free package.
Symbol
BTC4505M3
Outline
SOT-89
B：Base C：Collector E：Emitter
BCE
Ordering Information
Device
Package
Shipping
BTC4505M3-0-T2-G
SOT-89 1000 pcs / Tape & Reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packi...