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BTC4505N3

Comchip Technology
Part Number BTC4505N3
Manufacturer Comchip Technology
Description High Voltage Transistor
Published Apr 17, 2005
Detailed Description High Voltage Transistor (NPN) BTC4505N3 Features High breakdown voltage. (BVceo =400V) Low saturation voltage, typically...
Datasheet PDF File BTC4505N3 PDF File

BTC4505N3
BTC4505N3

Overview
High Voltage Transistor (NPN) BTC4505N3 Features High breakdown voltage.
(BVceo =400V) Low saturation voltage, typically Vce(sat) =0.
1V at Ic/Ib=10mA/1mA C COMCHIP www.
comchiptech.
com COLLECTOR 3 1 BASE SOT-23 .
119 (3.
0) .
110 (2.
8) 2 EMITTER .
020 (0.
5) Top View .
056 (1.
40) .
047 (1.
20) .
006 (0.
15) .
002 (0.
05) .
037(0.
95) .
037(0.
95) .
006 (0.
15)max.
.
020 (0.
5) .
020 (0.
5) .
103 (2.
6) .
086 (2.
2) Dimensions in inches (millimeters) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limit 400 400 6 300 0.
225 150 -55~+150 MDS0405003A Page 1 .
...


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