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ACE2301
Technology
Description
P-Channel Enhancement Mode MOSFET
The ACE2301 is the P-Channel logic enhancement mode power field effect
transistor are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features
• • • • •
VDS=-20V RDS(ON),Vgs@-4.
5V,Ids@-2.
8A=100mΩ RDS(ON),Vgs@-2.
5V,Ids@-2.
0A=150mΩ Advanced trench process technology High Den...