DatasheetsPDF.com

ACE2308E

ACE Technology
Part Number ACE2308E
Manufacturer ACE Technology
Description N-Channel MOSFET
Published Apr 18, 2016
Detailed Description ACE2308E N-Channel 30-V MOSFET Features • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed ...
Datasheet PDF File ACE2308E PDF File

ACE2308E
ACE2308E

Overview
ACE2308E N-Channel 30-V MOSFET Features • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Applications • Power Routing • Li Ion Battery Packs • Level Shifting and Driver Circuits Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a TA=25℃ TA=70℃ Pulse Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TA=25℃ TA=70℃ Operating Temperature / Storage Temperature *1 Pw ≦10 μs, Duty cycle ≦1 % *2 When mounted on a 1*0.
75*0.
062 inch glass epoxy board% Symbol Limit VDS 30 VGS ±12 3.
5 ID 2.
8 IDM 15 IS 1.
9 1.
3 PD 0.
8 TJ/TSTG -55/150 Units V V A A A W OC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Maximum Junction-to-Ambient a t <= 10 sec Steady State RθJA 100 166 Units OC/W Packaging Type SOT-23-3 D GS VER 1.
1 1 ACE2308E N-Channel 30-V MOSFET Ordering information ACE2308EBM + H Halogen - free Pb - free BM : SOT-23-3 Electrical Characteristics (TA=25℃, unless otherwise specified) Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol Conditions Static Min.
Typ.
Max.
Unit VGS(th) VDS = VGS, ID = 250 uA 0.
4 V VGS(th) VDS = 0 V, VGS = ±12 V ±10 uA IDSS VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 55°C 1 uA 25 ID(on) VDS = 5 V, VGS = 4.
5 V 5 A rDS(on) VGS = 4.
5 V, ID = 3 A VGS = 2.
5 V, ID = 2.
4 A 60 mΩ 82 gfs VDS = 15 V, ID = 2.
8 A 12 S VSD IS = 1 A, VGS = 0 V 0.
69 V Dynamic b Qg 6 Qgs VDS = 15 V, VGS = 4.
5 V, ID = 3 A Qgd 1.
0 nC 2.
0 td(on) tr td(off)* tf Ciss Coss Crss VDS = 15 V, RL = 3.
6 Ω, ID = 3 A, VGEN = 4.
5 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f = 1 MHz 8 21 48 26 417...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)