TPC8120
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type (U-MOSⅥ)
TPC8120
Lithium Ion Battery Applications Power Management Switch Applications
Unit: mm
• Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 2.
6 mΩ (typ.
) • High forward transfer admittance: |Yfs| =80 S (typ.
) • Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (t = 10 s) (Note 2a)
Dra...