Freescale Semiconductor Technical Data
Document Number: MRF6V12500H Rev.
0, 9/2009
com
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
RF Power
transistors designed for applications operating at frequencies between 965 and 1215 MHz.
These devices are suitable for use in pulsed applications.
• Typical Pulsed Performance: VDD = 50 Volts, IDQ = 200 mA, Pout = 500 Watts Peak (50 W Avg.
), f = 1030 MHz, Pulse Width = 128 μsec, Duty Cycle = 10% Power Gain — 19.
7 dB Drain Efficiency — 62% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • In...