Freescale Semiconductor Technical Data
Document Number: MRF6S27050H Rev.
1, 12/2008
com
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2500 to 2700 MHz.
Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 7 Watts Avg.
, f = 2615 MHz, Channel Bandwidth = 3.
84 MHz.
PAR = 8.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 16 dB Drain Efficiency — 22.
5% ACPR @ 5 MHz Offset — - 42.
5 dBc @ 3.
84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28...