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MRF6S27050HSR3

Part Number	MRF6S27050HSR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Mar 20, 2010
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 www.DataSheet4U.com RF Power Field...
Datasheet	MRF6S27050HSR3 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev.
1, 12/2008 www.
DataSheet4U.
com RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2500 to 2700 MHz.
Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 7 Watts Avg.
, f = 2615 MHz, Channel Bandwidth = 3.
84 MHz.
PAR = 8.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 16 dB Drain Efficiency — 22.
5% ACPR @ 5 MHz Offset — - 42.
5 dBc @ 3.
84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28...

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MRF6S27050HSR3 RF Power Field Effect Transistors - Freescale Semiconductor

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