isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for switching
regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current- Continuous
12
A
ICM
Collector Current-Peak
30
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
6
A
150
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3552
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