Part Number
|
IXFT26N60P |
Manufacturer
|
IXYS Corporation |
Description
|
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated |
Published
|
Apr 2, 2010 |
Detailed Description
|
Advance AdvanceTechnical TechnicalInformation Information
www.DataSheet4U.com
PolarHVTM Power MOSFET
N-Channel Enhancem...
|
Datasheet
|
IXFT26N60P
|
Overview
Advance AdvanceTechnical TechnicalInformation Information
www.
DataSheet4U.
com
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS
VDSS ID25
= = RDS(on) ≤ ≤ trr
TO-247 (IXFH)
600 V 26 A 270 mΩ 200 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 5 Ω TC = 25°C
Maximum Ratings 600 600 ± 30 ± 40 26 65 26 40 1.
2 10 V V V V A A A mJ J V/ns
G...
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