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IXFT26N60

IXYS
Part Number IXFT26N60
Manufacturer IXYS
Description Power MOSFETs
Published Jul 7, 2015
Detailed Description HiPerFETTM Power MOSFETs IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low ...
Datasheet PDF File IXFT26N60 PDF File

IXFT26N60
IXFT26N60

Overview
HiPerFETTM Power MOSFETs IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr Preliminary data V DSS I D25 600 V 26 A 600 V 28 A trr £ 250 ns R DS(on) 0.
25 W 0.
25 W Symbol VDSS VDGR V GS VGSM I D25 I DM I AR EAR EAS dv/dt P D TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient T C = 25°C, Chip capability T C = 25°C, pulse width limited by T JM T C = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W T C = 25°C 1.
6 mm (0.
063 in) from case for 10 s Mounting torque Maximum Ratings IXFH/ IXFT IXFK 600 600 600 600 ±20 ±20 ±30 ±30 26 28 104 112 26 28 50 50 1.
5 1.
5 V V V V A A A mJ J 5 5 V/ns 360 416 -55 .
.
.
+150 150 -55 .
.
.
+150 300 300 W °C °C °C °C 1.
13/10 6 0.
9/6 Nm/lb.
in.
10 g TO-247 AD (IXFH) TO-268 (D3) ( IXFT) G S TO-264 AA (IXFK) (TAB) (TAB) G D S D (TAB) G = Gate S = Source TAB = Drain Either Source te...


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