Part Number
|
IXTH50N20 |
Manufacturer
|
IXYS Corporation |
Description
|
MegaMOS FET |
Published
|
Apr 11, 2010 |
Detailed Description
|
com
MegaMOSTMFET
IXTH 50N20 IXTM 50N20
VDSS = 200 V = 50 A ID25 RDS(on) = 45 mΩ
N-Channel Enhancemen...
|
Datasheet
|
IXTH50N20
|
Overview
com
MegaMOSTMFET
IXTH 50N20 IXTM 50N20
VDSS = 200 V = 50 A ID25 RDS(on) = 45 mΩ
N-Channel Enhancement Mode
Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C T C = 25°C, pulse width limited by TJM T C = 25°C
Maximum Ratings 200 200 ±20 ±30 50 200 300 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A W °C °C °C
TO-247 AD (IXTH)
D (TAB)
TO-204 AE (IXTM)
D G = Gate, S = Source,
G
Mounting torque
1.
13/10 Nm/lb.
in.
TO-204 = 18 g, TO-247 = 6 g 300 °C
D = Drain, TAB = Drain
Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s
Features
l l l l
...
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