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IXTH50N30

IXYS
Part Number IXTH50N30
Manufacturer IXYS
Description Power MOSFET
Published Nov 12, 2020
Detailed Description Advance Technical Information High Current Power MOSFET N-Channel Enhancement Mode IXTH 50N30 IXTT 50N30 VDSS ID25 RD...
Datasheet PDF File IXTH50N30 PDF File

IXTH50N30
IXTH50N30

Overview
Advance Technical Information High Current Power MOSFET N-Channel Enhancement Mode IXTH 50N30 IXTT 50N30 VDSS ID25 RDS(on) = 300 V = 50 A = 65 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Mounting torque (TO-247) TO-247 TO-268 Maximum Ratings 300 V 300 V ±20 V ±30 V 50 A 200 A 50 A 50 mJ 1.
5 J 5 V/ns 400 W -55 .
.
.
+150 °C 150 °C -55 .
.
.
+150 °C 300 ...


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