HAT2201WP Silicon N Channel Power MOS FET Power Switching Features  Capable of 8 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 34 m typ.
(at VGS = 10 V) Outline Preliminary Datasheet REJ03G1679-0310 Rev.
3.
10 May 21, 2010 RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 5 678 D DDD 4 4 32 1 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1.
PW...

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