DatasheetsPDF.com

HAT2201WP

Renesas Technology
Part Number HAT2201WP
Manufacturer Renesas Technology
Description Silicon N-Channel Power MOSFET
Published Apr 13, 2010
Detailed Description HAT2201WP Silicon N Channel Power MOS FET Power Switching Features  Capable of 8 V gate drive  Low drive current  Hig...
Datasheet PDF File HAT2201WP PDF File

HAT2201WP
HAT2201WP

Overview
HAT2201WP Silicon N Channel Power MOS FET Power Switching Features  Capable of 8 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 34 m typ.
(at VGS = 10 V) Outline Preliminary Datasheet REJ03G1679-0310 Rev.
3.
10 May 21, 2010 RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 5 678 D DDD 4 4 32 1 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1.
PW  10 s, duty cycle  1% 2.
Value at Tch = 25°C, Rg  50  3.
Tc = 25°C Symbol VDSS VGSS ID ID(pulse) Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 100 ±20 15 60 15 15 22.
5 15 8.
33 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C/W °C °C REJ03G1679-0310 Rev.
3.
10 May...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)