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Part Number
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JDV2S10S |
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Manufacturer
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Toshiba Semiconductor |
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Description
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VCO Diode |
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Published
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Apr 14, 2010 |
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Detailed Description
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JDV2S10S
TOSHIBA DIODE Silicon Epitaxial Planar Type
www.DataSheet4U.com
JDV2S10S
VCO for UHF Band Radio
• • • High Cap...
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Datasheet
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JDV2S10S
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Overview
JDV2S10S
TOSHIBA DIODE Silicon Epitaxial Planar Type
www.
DataSheet4U.
com
JDV2S10S
VCO for UHF Band Radio
• • • High Capacitance Ratio : C0.
5V/C2.
5V = 2.
5 (typ.
) Low Series Resistance : rs = 0.
35 Ω (typ.
) This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 −55~150 Unit V °C °C
Electrical Characteristics (Ta = 25°C)
Characteristics Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C0.
5V C2.
5V C0.
5V/C2.
5V rs IR = 1 µA VR = 10 V VR = 0.
5 V, f = 1 MHz VR = 2.
5 V, f = 1 MHz VR = 1 V, f = 470 MHz Test Condition
...
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