www.
DataSheet4U.
com M30L0R7000T0 M30L0R7000B0 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.
8V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.
7V to 2.
0V for program, erase and read – VDDQ = 1.
7V to 2.
0V for I/O Buffers – VPP = 9V for fast program (12V tolerant) SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous Page Read mode – Random Access: 85ns SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME – 10µs typical Word program time using Buffer Program MEMORY ORGANIZATION – Multiple Bank Memory Array: 8 Mbit Banks – Parameter Blocks (Top or Bottom location) DUAL OPERATIONS – program/erase in one Bank while read...

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