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M30L0R7000B0

STMicroelectronics
Part Number M30L0R7000B0
Manufacturer STMicroelectronics
Description 128-Mbit (8Mb x16 Multiple Bank Multi-Level Burst) 1.8V Supply Flash Memory
Published Apr 15, 2010
Detailed Description www.DataSheet4U.com M30L0R7000T0 M30L0R7000B0 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash M...
Datasheet PDF File M30L0R7000B0 PDF File

M30L0R7000B0
M30L0R7000B0

Overview
www.
DataSheet4U.
com M30L0R7000T0 M30L0R7000B0 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.
8V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.
7V to 2.
0V for program, erase and read – VDDQ = 1.
7V to 2.
0V for I/O Buffers – VPP = 9V for fast program (12V tolerant) SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous Page Read mode – Random Access: 85ns SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME – 10µs typical Word program time using Buffer Program MEMORY ORGANIZATION – Multiple Bank Memory Array: 8 Mbit Banks – Parameter Blocks (Top or Bottom location) DUAL OPERATIONS – program/erase in one Bank while read in others – No delay between read and write operations BLOCK LOCKING – All blocks locked at power-up – Any combination of blocks can be locked with zero latency – WP for Block Lock-Down – Absolute Write Protection with VPP = VSS SECURITY – 64 bit unique device number – 2112 bit user programmable OT...


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