SEMICONDUCTOR
TECHNICAL DATA
General Description
KHB5D0N50P/F/F2
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
KHB5D0N50P
A O C F E G B Q I K M L J D N N H P
DIM MILLIMETERS _ 0.
2 9.
9 + A B C D E F G H I J K L M N O
1 2 3
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES
VDSS= 500V, ID= 5.
0A Drain-Source ON Resistance : RDS(ON)=1.
5 @VGS = 10V Qg(typ.
) = 21nC
15.
95 MAX 1.
3+0.
1/-0.
05 _ 0.
1 0.
8 + _ 0.
2 3.
6 + _ 0.
1 2.
8 + 3.
7 0.
5+0.
1/-0.
05 1.
5 _ 0.
3 13.
08 + 1.
46 _ 0.
1 1.
4 + _ 0.
1 1.
27 + _ 0.
2 2.
54 + _ 4.
5 ...