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KHB5D0N50F

KEC
Part Number KHB5D0N50F
Manufacturer KEC
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Published May 14, 2010
Detailed Description SEMICONDUCTOR TECHNICAL DATA General Description KHB5D0N50P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB5D0N50P A O ...
Datasheet PDF File KHB5D0N50F PDF File

KHB5D0N50F
KHB5D0N50F

Overview
SEMICONDUCTOR TECHNICAL DATA General Description KHB5D0N50P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB5D0N50P A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.
2 9.
9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES VDSS= 500V, ID= 5.
0A Drain-Source ON Resistance : RDS(ON)=1.
5 @VGS = 10V Qg(typ.
) = 21nC 15.
95 MAX 1.
3+0.
1/-0.
05 _ 0.
1 0.
8 + _ 0.
2 3.
6 + _ 0.
1 2.
8 + 3.
7 0.
5+0.
1/-0.
05 1.
5 _ 0.
3 13.
08 + 1.
46 _ 0.
1 1.
4 + _ 0.
1 1.
27 + _ 0.
2 2.
54 + _ 4.
5 + 0.
2 _ 0.
2 2.
4 + _ 0.
2 9.
2 + MAXIMUM RATING (Tc=25 www.
DataSheet4U.
com CHARACTERISTIC ) RATING SYMBOL KHB5D0N50F UNIT KHB5D0N50P KHB5D0N50F2 500 30 5.
0 ID 2.
9 IDP EAS EAR dv/dt 73 PD 0.
74 Tj Tstg 150 -55 150 0.
3 W/ 20 390 9.
2 3.
5 38 2.
9* 20* mJ mJ V/ns W Q 1 2 3 1.
GATE 2.
DRAIN 3.
SOURCE P Q TO-220AB KHB5D0N50F A F C Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 VDSS VGSS V V 5.
0* A K E O DIM B MILLIMETERS L M J R D N N H A B C D E F G H J K L M N O Q R _ 0.
2 10.
16 + _ 0.
2 15.
87 + _ 0.
2 2.
54 + _ 0.
1 0.
8 + _ 0.
1 3.
18 + _ 0.
1 3.
3 + _ 12.
57 + 0.
2 _ 0.
1 0.
5 + 13.
0 MAX _ 0.
1 3.
23 + 1.
47 MAX 1.
47 MAX _ 0.
2 2.
54 + _ 0.
2 6.
68 + _ 0.
2 4.
7 + _ 0.
2 2.
76 + G 1.
GATE 2.
DRAIN 3.
SOURCE Maximum Junction Temperature Storage Temperature Range Thermal Characteristics TO-220IS (1) KHB5D0N50F2 A Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-toAmbient RthJC RthCS RthJA C F 1.
71 0.
5 62.
5 3.
31 62.
5 /W S /W /W P E G B DIM MILLIMETERS K * : Drain current limited by maximum junction temperature.
L L R D D N N D J ...


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