AO4900 Dual N-Channel Enhancement Mode Field Effect
Transistor with
Schottky Diode
General Description
The AO4900 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters.
A
Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further.
Standard Product AO4900 is Pbcom free (meets ROHS & Sony 259 specifications).
AO4900L is a Green Product ordering option.
AO4900 and AO4900L are electrically identical.
Features
VDS (V) = 30V ID = 6.
9A (VGS = 10V) RDS(ON) 27mΩ (VGS = 10V) RDS(ON) 32mΩ (VGS = 4.
5V)...