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AO4900

Alpha & Omega Semiconductors
Part Number AO4900
Manufacturer Alpha & Omega Semiconductors
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Published May 22, 2010
Detailed Description AO4900 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4900 uses a...
Datasheet PDF File AO4900 PDF File

AO4900
AO4900

Overview
AO4900 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4900 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters.
A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further.
Standard Product AO4900 is Pbwww.
DataSheet4U.
com free (meets ROHS & Sony 259 specifications).
AO4900L is a Green Product ordering option.
AO4900 and AO4900L are electrically identical.
Features VDS (V) = 30V ID = 6.
9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.
5V) RDS(ON) < 50mΩ (VGS = 2.
5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.
5V@1A D2 S2/A G2 S1 G1 1 2 3 4 8 7 6 5 D2/K D2/K D1 D1 G2 S2 K D1 SOIC-8 A G1 S1 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain CurrentA Pulsed Drain Current B MOSFET 30 ±12 6.
9 5.
8 40 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C A Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-AmbientA Maximum Junction-to-Ambient C A B TA=70°C TA=25°C TA=70°C IF IFM PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL 2 1.
44 -55 to 150 Typ 48 74 35 47.
5 71 32 30 3 2 40 2 1.
44 -55 to 150 Max 62.
5 110 40 62.
5 110 40 V A W °C Units °C/W Steady-State Steady-State t ≤ 10s Steady-State Steady-State Maximum Junction-to-Lead Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A Maximum Junction-to-Ambient °C/W Alpha & Omega Semiconductor, Ltd.
AO4900 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.
5V, VDS=5V VGS=10V, I...


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