AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4912 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters.
A
Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard Product AO4912 is Pb-free (meets ROHS & Sony 259 specifications).
AO4912L is a Green Product www.
DataSheet4U.
com ordering option.
AO4912 and AO4912L are electrically identical.
Features Q1
VDS (V) = 30V ID = 8.
5A RDS(ON) 17mΩ RDS(ON) 25mΩ
Q2
VDS(V) = 30V ID=7A (VGS = 10V) 26mΩ...