AO4918 Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4918 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters.
A
Schottky diode is co-packaged in parallel www.
DataSheet4U.
com with the synchronous MOSFET to boost efficiency further Standard Product AO4918 is Pb-free (meets ROHS & Sony 259 specifications).
AO4918L is a Green Product ordering option.
AO4918 and AO4918L are electrically identical.
Features Q1
Q2
VDS (V) = 30V VDS(V) = 30V ID = 9.
3A (VGS = 10V) ID=8.
3A (VGS = 10V RDS(ON) 14.
5mΩ 18m...