MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF9130L/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect
Transistors
Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
• Typical Performance for GSM Frequencies, 921 to 960 MHz, 28 Volts Output Power @ P1dB — 135 Watts Power Gain — 16.
5 dB @ 130 Watts Output Power Efficiency — 48% @ 130 Watts Output Power • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficien...