DatasheetsPDF.com

MRF9130LSR3

Part Number	MRF9130LSR3
Manufacturer	Motorola
Description	28 V LATERAL N-CHANNEL RF POWER MOSFETs
Published	May 29, 2010
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9130L/D The RF Sub - M...
Datasheet	MRF9130LSR3 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
Order this document by MRF9130L/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
• Typical Performance for GSM Frequencies, 921 to 960 MHz, 28 Volts Output Power @ P1dB — 135 Watts Power Gain — 16.
5 dB @ 130 Watts Output Power Efficiency — 48% @ 130 Watts Output Power • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficien...

Similar Datasheet

MRF9130LSR3 28 V LATERAL N-CHANNEL RF POWER MOSFETs - Motorola

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)