Part Number
|
FLL410IK-4C |
Manufacturer
|
Fujitsu |
Description
|
L-Band High Power GaAs FET |
Published
|
Jun 14, 2010 |
Detailed Description
|
L-Band High Power GaAs FET
FEATURES ・High Output Power: Pout=46.0dBm(Typ.) ・High Gain: GL=11.5dB(Typ.) ・High PAE: ηadd=4...
|
Datasheet
|
FLL410IK-4C
|
Overview
L-Band High Power GaAs FET
FEATURES ・High Output Power: Pout=46.
0dBm(Typ.
) ・High Gain: GL=11.
5dB(Typ.
) ・High PAE: ηadd=44%(Typ.
) ・Broad Band: 3.
4~3.
7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is designed for use in 3.
4 – 3.
7 GHz band amplifiers.
This new product is uniquely suited for use in WLL applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
FLL410IK-4C com
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25oC)
Item Drain-Source Voltage Gate-Sou...
Similar Datasheet