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FLL410IK-4C

Fujitsu
Part Number FLL410IK-4C
Manufacturer Fujitsu
Description L-Band High Power GaAs FET
Published Jun 14, 2010
Detailed Description L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm(Typ.) ・High Gain: GL=11.5dB(Typ.) ・High PAE: ηadd=4...
Datasheet PDF File FLL410IK-4C PDF File

FLL410IK-4C
FLL410IK-4C

Overview
L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.
0dBm(Typ.
) ・High Gain: GL=11.
5dB(Typ.
) ・High PAE: ηadd=44%(Typ.
) ・Broad Band: 3.
4~3.
7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is designed for use in 3.
4 – 3.
7 GHz band amplifiers.
This new product is uniquely suited for use in WLL applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
FLL410IK-4C www.
DataSheet4U.
com ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25oC) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 107.
0 -65 to +175 175 o Unit V V W C C o RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25oC) Item DC Input Voltage Gate Current Gate Current Operating Channel Temperature Sym...


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