Part Number
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TC59YM916BKG32A |
Manufacturer
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Toshiba America Electronic |
Description
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512-megabit XDRTM DRAM The Rambus XDRTM DRAM device |
Published
|
Jun 15, 2010 |
Detailed Description
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TC59YM916BKG24A,32A,32B,40B,32C,40C
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
OVERVIEW
Lead ...
|
Datasheet
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TC59YM916BKG32A
|
Overview
TC59YM916BKG24A,32A,32B,40B,32C,40C
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
OVERVIEW
Lead Free
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The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 32M words by 16 bits.
The use of Differential Rambus Signaling Level (DRSL) technology permits 4000/3200/2400 Mb/s transfer rates while using conventional system and board design technologies.
XDR DRAM devices are capable of sustained data ...
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