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TC59YM916BKG32A

Toshiba America Electronic
Part Number TC59YM916BKG32A
Manufacturer Toshiba America Electronic
Description 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
Published Jun 15, 2010
Detailed Description TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC OVERVIEW Lead ...
Datasheet PDF File TC59YM916BKG32A PDF File

TC59YM916BKG32A
TC59YM916BKG32A

Overview
TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC OVERVIEW Lead Free www.
DataSheet4U.
com The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 32M words by 16 bits.
The use of Differential Rambus Signaling Level (DRSL) technology permits 4000/3200/2400 Mb/s transfer rates while using conventional system and board design technologies.
XDR DRAM devices are capable of sustained data ...


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