| Part Number | PBSS2515E |
| Manufacturer | NXP |
| Title | 0.5A NPN transistor |
| Description | NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement: PBSS3515E. 1.2 Features s ... |
| Features |
s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s s s ...
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| File Size | 110.11KB |
| Datasheet |
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PBSS2515F : NPN low VCEsat transistor in a SC-89 (SOT490) plastic package. PNP complement: PBSS3515F. MARKING TYPE NUMBER PBSS2515F 2A MARKING CODE Fig.1 handbook, halfpage PBSS2515F QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 15 500 1 500 UNIT V mA A mΩ 3 3 1 2 MAM410 1 Top view 2 Simplified outline (SC-89; SOT490) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base v.
PBSS2515M : Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3515M. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICM RCEsat collector-emitter voltage collector current (DC) peak collecto.
PBSS2515MB : NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3515MB. 1.2 Features and benefits Leadless ultra small SMD plastic package Low package height of 0.37 mm Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM 1.3 Applications DC-to-DC conversion Supply line switching Battery charger High efficiency due to less heat generation AEC-Q101 qualified Reduced Printed-Circuit Board (PCB) requirements LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) 1.4 Quick reference data Table 1. Symbol VCE.
PBSS2515VPN : NPN/PNP low VCEsat transistor pair in a SOT666 plastic package. QUICK REFERENCE DATA SYMB.
PBSS2515VS : TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. 15 1 500 UNIT V A mΩ 5 4 6 5 4 TR2 TR1 DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. MARKING TYPE NUMBER PBSS2515VS MARKING CODE N9 Fig.1 Simplified outline (SOT666) and symbol. 1 Top view 2 3 MAM447 1 2 3 2001 Nov 07 2 Philips Semiconductors Product specification 15 V low VCEsat NPN double transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS − − − − − − Tamb ≤ 25 °C; note 1 − −65 − 65 Tamb ≤ 25 °C; note 1 − MIN. PBSS2515VS MAX. UNIT Pe.
PBSS2515YPN : NPN/PNP low VCEsat transistor pair in a SC-88 plastic package. MARKING TYPE NUMBER PBSS2515YPN Note 1. * = -: made in Hong Kong * = t: made in Malaysia * = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS2515YPN SC-88 DESCRIPTION plastic surface mounted package; 6 leads MARKING CODE N8* Fig.1 6 handbook, halfpage 5 4 PBSS2515YPN QUICK REFERENCE DATA SYMBOL VCEO ICM RCEsat PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. 15 1 500 UNIT V A mΩ 6 5 4 TR2 TR1 1 Top view 2 3 MAM445 1 2 3 Simplified outline SC-88 (SOT363) and symbol. VERS.