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PBSS2515F

NXP
Part Number PBSS2515F
Manufacturer NXP
Description low VCEsat NPN transistor
Published Dec 4, 2006
Detailed Description www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2515F 15 V low VCEsat NPN transistor Product speci...
Datasheet PDF File PBSS2515F PDF File

PBSS2515F
PBSS2515F

Overview
www.
DataSheet4U.
com DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2515F 15 V low VCEsat NPN transistor Product specification Supersedes data of 2001 Jan 26 2001 Sep 21 Philips Semiconductors Product specification 15 V low VCEsat NPN transistor FEATURES • Low collector-emitter saturation voltage • High current capabilities • Improved thermal behaviour due to flat leads.
APPLICATIONS • General purpose switching and muting • Low frequency driver circuits • LCD backlighting • Audio frequency general purpose amplifier applications • Battery driven equipment (mobile phones, video cameras and hand-held devices).
DESCRIPTION NPN low VCEsat transistor in a SC-89 (SOT490) plastic package.
PNP complement: PBSS3515F.
MARKING TYPE NUMBER PBSS2515F 2A MARKING CODE Fig.
1 handbook, halfpage PBSS2515F QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.
15 500 1 <500 UNIT V mA A mΩ 3 3 1 2 MAM410 1 Top view 2 Simplified outline (SC-89; SOT490) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN.
MAX.
15 15 6 500 1 100 250 +150 150 +150 V V V mA A mA mW °C °C °C UNIT 2001 Sep 21 2 Philips Semiconductors Product specification 15 V low VCEsat NPN transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air VALUE 500 PBSS2515F UNIT K/W CHARACTERISTICS Tamb = 25 °C; unless otherwise specified.
SYMBOL ICBO IEBO hFE PARAMETER collector-b...


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