Part Number
|
IXTQ120N15P |
Manufacturer
|
IXYS |
Description
|
Power MOSFET |
Published
|
Jun 16, 2010 |
Detailed Description
|
PolarHTTM Power MOSFET
IXTQ 120N15P IXTT 120N15P
N-Channel Enhancement Mode Avalanche Rated
V= DSS
ID25 = ≤ RDS(on)
...
|
Datasheet
|
IXTQ120N15P
|
Overview
PolarHTTM Power MOSFET
IXTQ 120N15P IXTT 120N15P
N-Channel Enhancement Mode Avalanche Rated
V= DSS
ID25 = ≤ RDS(on)
150 V 120 A 16 mΩ
Symbol
VDSS V
DGR
VDSS VGSM
ID25 ID(RMS) I
DM
IAR EAR EAS
dv/dt
PD TJ TJM Tstg
TL TSOLD Md Weight
Test Conditions
TJ = 25° C to 175° C
T J
=
25°
C
to
175°
C;
R GS
=
1
MΩ
Continuous Transient
TC = 25° C External lead current limit
T C
=
25°
C,
pulse
width
limited
by
T JM
TC = 25° C
TC = 25° C TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω
TC = 25° C
1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 s
Mounting torque (TO-3P)
TO-3P TO-268
Maximum Ratings
150
V
150
V
±20
V
±30
V
120
A
75
A...
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