DatasheetsPDF.com

IXTQ120N15P

IXYS
Part Number IXTQ120N15P
Manufacturer IXYS
Description Power MOSFET
Published Jun 16, 2010
Detailed Description PolarHTTM Power MOSFET IXTQ 120N15P IXTT 120N15P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) ...
Datasheet PDF File IXTQ120N15P PDF File

IXTQ120N15P
IXTQ120N15P

Overview
PolarHTTM Power MOSFET IXTQ 120N15P IXTT 120N15P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 150 V 120 A 16 mΩ Symbol VDSS V DGR VDSS VGSM ID25 ID(RMS) I DM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C T J = 25° C to 175° C; R GS = 1 MΩ Continuous Transient TC = 25° C External lead current limit T C = 25° C, pulse width limited by T JM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) TO-3P TO-268 Maximum Ratings 150 V 150 V ±20 V ±30 V 120 A 75 A 260 A 60 A 60 mJ 2.
0 J 10 V/ns 600 W -55 .
.
.
+175 °C 175 °C -55 .
.
.
+150 °C 300 °C 260 °C 1.
13/10 Nm/lb.
in.
5.
5 g 5.
0 g Symbol Test Conditions (T J = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min.
Typ.
Max.
150 V VGS(th) VDS = VGS, ID = 250µA 3.
0 5.
0 V I GSS V GS = ±20 V, DC V DS = 0 ±100 nA IDSS VDS = VDSS VGS = 0 V TJ = 175° C 25 µA 500 µA RDS(on) VGS = 10 V, ID = 0.
5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 16 m Ω TO-3P (IXTQ) G DS (TAB) TO-268 (IXTT) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2005 IXYS All rights reserved DS99280E(10/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd R thJC RthCS IXTQ 120N15P IXTT 120N15P Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min.
Typ.
Max.
V = 10 V; I = 0.
5 I , pulse test 40 60 S DS D D25 VGS = 0 V, VDS = 25 V, f = 1 MHz 4900 pF 1300 pF 330 pF VGS = 10 V, VDS = 0.
5 VDSS, ID = 60 A RG = 4 Ω (External) 33 ns 42 ns 85 ns 26 n...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)