Part Number
|
IXFH110N10P |
Manufacturer
|
IXYS |
Description
|
PolarHT HiPerFET Power MOSFET |
Published
|
Jun 16, 2010 |
Detailed Description
|
PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
Preliminary Data Sheet
S...
|
Datasheet
|
IXFH110N10P
|
Overview
PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
Preliminary Data Sheet
Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient
IXFH 110N10P IXFV 110N10P IXFV 110N10PS
VDSS ID25
RDS(on)
= 100 V = 110 A = 15 mΩ
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TO-247 (IXFH) Maximum Ratings 100 100 ± 20 ± 30 110 75 250 60 40 1.
0 10 480 -55 .
.
.
+175 175 -55 .
.
.
+150 V V
G D
V V A A A A mJ J V/ns W °C °C °C °C °C G D
S
(TAB)
TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 1...
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