BLF7G22LS-130
Power LDMOS
transistor
Rev.
01 — 2 February 2010
com
Product data sheet
1.
Product profile
1.
1 General description
130 W LDMOS power
transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA
[1] [2]
f (MHz) 2110 to 2170 2110 to 2170
IDq (mA) 950 950
VDS (V) 28 28
PL(AV) (W) 30 33
Gp (dB) 18.
5 18.
5
ηD (%) 32 34
ACPR (dBc) −32[1] −39[2]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.
4 dB at 0.
01 % probability on CCDF; carrier spacing 5 MHz.
Test signal: 3...