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BLF7G22LS-130

Part Number	BLF7G22LS-130
Manufacturer	NXP Semiconductors
Description	Power LDMOS transistor
Published	Jun 18, 2010
Detailed Description	BLF7G22LS-130 Power LDMOS transistor Rev. 01 — 2 February 2010 www.DataSheet4U.com Product data sheet 1. Product prof...
Datasheet	BLF7G22LS-130 PDF File

Overview

BLF7G22LS-130 Power LDMOS transistor Rev.
01 — 2 February 2010 www.
DataSheet4U.
com Product data sheet 1.
Product profile 1.
1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA [1] [2] f (MHz) 2110 to 2170 2110 to 2170 IDq (mA) 950 950 VDS (V) 28 28 PL(AV) (W) 30 33 Gp (dB) 18.
5 18.
5 ηD (%) 32 34 ACPR (dBc) −32[1] −39[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.
4 dB at 0.
01 % probability on CCDF; carrier spacing 5 MHz.
Test signal: 3...

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BLF7G22LS-130 Power LDMOS transistor - NXP Semiconductors

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