BLL1214-250R
LDMOS L-band radar power
transistor
Rev.
01 — 4 February 2010
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Product data sheet
1.
Product profile
1.
1 General description
Silicon N-channel enhancement model LDMOS power
transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap.
The common source is connected to the flange.
Table 1.
Test information Typical RF performance at Th = 25 °C; tp = 1 ms; δ = 10 %; in a common source class-AB test circuit.
Mode of operation pulsed RF f (GHz) 1.
2 to 1.
4 VDS (V) 36 IDq (mA) 150 PL (W) Gp (dB) ηD (%) 47 Pdroop(pulse) (dB) 0.
2 tr (ns) 15 tf (ns) 5
250 13
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should ...