com
PHX23NQ11T
N-channel TrenchMOS™ standard level FET
Rev.
01 — 14 May 2004 Product data
1.
Product profile
1.
1 Description
N-channel enhancement mode field-effect
transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology.
1.
2 Features
s Low on-state resistance s Isolated package.
1.
3 Applications
s DC-to-DC converters s Switched-mode power supplies.
1.
4 Quick reference data
s VDS ≤ 110 V s Ptot ≤ 41.
6 W s ID ≤ 16 A s RDSon ≤ 70 mΩ.
2.
Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT186A (TO-220F) simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; isolated
g
mbb076
Simplified outline
mb
Symbol
d
s
...