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PHX23NQ11T

NXP
Part Number PHX23NQ11T
Manufacturer NXP
Description N-Channel MOSFET
Published Jun 20, 2010
Detailed Description www.DataSheet4U.com PHX23NQ11T N-channel TrenchMOS™ standard level FET Rev. 01 — 14 May 2004 Product data 1. Product p...
Datasheet PDF File PHX23NQ11T PDF File

PHX23NQ11T
PHX23NQ11T

Overview
www.
DataSheet4U.
com PHX23NQ11T N-channel TrenchMOS™ standard level FET Rev.
01 — 14 May 2004 Product data 1.
Product profile 1.
1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology.
1.
2 Features s Low on-state resistance s Isolated package.
1.
3 Applications s DC-to-DC converters s Switched-mode power supplies.
1.
4 Quick reference data s VDS ≤ 110 V s Ptot ≤ 41.
6 W s ID ≤ 16 A s RDSon ≤ 70 mΩ.
2.
Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT186A (TO-220F) simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; isolated g mbb076 Simplified outline mb Symbol d s 1 2 3 MBK110 SOT186A (TO-220F) Philips Semiconductors PHX23NQ11T N-channel TrenchMOS™ standard level FET w w w .
D a t a S h e e t 4 3.
Ordering information Table 2: Ordering information Package Name PHX23NQ11T TO-220F Description Version Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A 3 lead TO-220 ‘full pack’ Type number 4.
Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Th = 25 °C peak source (diode forward) current Th = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 14 A; tp = 0.
1 ms; VDD ≤ 100 V; RGS = 50 Ω; VGS = 10 V; starting at Tj = 25 °C [1] [1] Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Th = 25 °C; VGS = 10 V; Figure 2 and 3 Th = 100 °C; VGS = 10 V; Figure 2 Th = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Th = 25 °C; Figure 1 [1] [1] [1] [1] Min −55 −55 - Max 110 110 ±20 16 10.
1 64.
3 41.
6 +150 +150 16 64.
3 93 Unit V V V A A A W °C °C A A mJ Source-drain diode Avalanche rugg...


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