FDFME2P823ZT Integrated P-Channel PowerTrench® MOSFET and
Schottky Diode
FDFME2P823ZT
July 2010
Integrated P-Channel PowerTrench® MOSFET and
Schottky Diode -20 V, -2.
6 A, 142 mΩ
Features
General Description
Max rDS(on) = 142 mΩ at VGS = -4.
5 V, ID = -2.
3 A Max rDS(on) = 213 mΩ at VGS = -2.
5 V, ID = -1.
8 A Max rDS(on) = 331 mΩ at VGS = -1.
8 V, ID = -1.
5 A Max rDS(on) = 530 mΩ at VGS = -1.
5 V, ID = -1.
2 A Low profile: 0.
55 mm maximum in the new package
MicroFET 1.
6x1.
6 Thin
Schottky: VF 0.
57 V @ 1A Free from halogenated compounds and antimony oxides
HBM ESD protection level 1600 V (Note 3)
RoHS Compliant
This device is designed specifically as a single package solu...