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FDFME2P823ZT

Fairchild Semiconductor
Part Number FDFME2P823ZT
Manufacturer Fairchild Semiconductor
Description Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Published Jun 29, 2010
Detailed Description FDFME2P823ZT Integrated P-Channel PowerTrench® MOSFET and Schottky Diode FDFME2P823ZT July 2010 Integrated P-Channel ...
Datasheet PDF File FDFME2P823ZT PDF File

FDFME2P823ZT
FDFME2P823ZT

Overview
FDFME2P823ZT Integrated P-Channel PowerTrench® MOSFET and Schottky Diode FDFME2P823ZT July 2010 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -20 V, -2.
6 A, 142 mΩ Features General Description „ Max rDS(on) = 142 mΩ at VGS = -4.
5 V, ID = -2.
3 A „ Max rDS(on) = 213 mΩ at VGS = -2.
5 V, ID = -1.
8 A „ Max rDS(on) = 331 mΩ at VGS = -1.
8 V, ID = -1.
5 A „ Max rDS(on) = 530 mΩ at VGS = -1.
5 V, ID = -1.
2 A „ Low profile: 0.
55 mm maximum in the new package MicroFET 1.
6x1.
6 Thin „ Schottky: VF < 0.
57 V @ 1A „ Free from halogenated compounds and antimony oxides „ HBM ESD protection level > 1600 V (Note 3) „ RoHS Compliant This device is designed specifically as a single package solu...


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