Freescale Semiconductor Technical Data
Document Number: MRF8S19140H com Rev.
0, 5/2010
RF Power Field Effect
Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA, W--CDMA and LTE base station applications with frequencies from 1930 to 1990 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 34 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Frequency 1930 MHz 1960 MHz 1990 MHz Gps (dB) 18.
8 19.
1 19.
3 ηD (%) 31.
7 31.
4 31.
5 Output PAR (dB) 6.
4 6.
5 6.
5 A...