DatasheetsPDF.com

MRF8S19140HSR3

Part Number	MRF8S19140HSR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Jun 30, 2010
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF8S19140H www.DataSheet4U.com Rev. 0, 5/2010 RF Power Field ...
Datasheet	MRF8S19140HSR3 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF8S19140H www.
DataSheet4U.
com Rev.
0, 5/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA, W--CDMA and LTE base station applications with frequencies from 1930 to 1990 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 34 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Frequency 1930 MHz 1960 MHz 1990 MHz Gps (dB) 18.
8 19.
1 19.
3 ηD (%) 31.
7 31.
4 31.
5 Output PAR (dB) 6.
4 6.
5 6.
5 ACPR (dBc) --38.
5 --38.
8 --38.
8 MRF8S19140HR3 MRF8S19140HSR3 1930-1990 MHz, 34 W AVG.
, 28 V CDMA, W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 191 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ≃ 138 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1.
Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) CASE 465-06, STYLE 1 NI-780 MRF8S19140HR3 CASE 465A-06, STYLE 1 NI-780S MRF8S19140HSR3 Symbol VDSS VGS VDD Tstg TC TJ Value --0.
5, +65 --6.
0, +10 32, +0 --65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Tempe...

Similar Datasheet

MRF8S19140HSR3 RF Power Field Effect Transistors - Freescale Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)