RF Power Field Effect Transistors
Freescale Semiconductor Technical Data Document Number: MRF8S19140H www.DataSheet4U.com Rev. 0, 5/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA, W--CDMA and LTE base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station ...
Freescale Semiconductor