Freescale Semiconductor Technical Data
Document Number: MRF8P23080H com Rev.
0, 5/2010
RF Power Field Effect
Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies from 2300 to 2400 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQA = 280 mA, VGSB = 0.
7 Vdc, Pout = 16 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Frequency 2300 MHz 2350 MHz 2400 MHz Gps (dB) 14.
6 14.
7 14.
6 ηD (%) 42.
0 41.
6 41.
4 Output PAR ...