DatasheetsPDF.com

MRF8P23080HSR3

Part Number	MRF8P23080HSR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Jun 30, 2010
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF8P23080H www.DataSheet4U.com Rev. 0, 5/2010 RF Power Field ...
Datasheet	MRF8P23080HSR3 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF8P23080H www.
DataSheet4U.
com Rev.
0, 5/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2300 to 2400 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQA = 280 mA, VGSB = 0.
7 Vdc, Pout = 16 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Frequency 2300 MHz 2350 MHz 2400 MHz Gps (dB) 14.
6 14.
7 14.
6 ηD (%) 42.
0 41.
6 41.
4 Output PAR ...

Similar Datasheet

MRF8P23080HSR3 RF Power Field Effect Transistors - Freescale Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)