Part Number
|
IXFN230N20T |
Manufacturer
|
IXYS |
Description
|
GigaMOS Power MOSFET |
Published
|
Jul 5, 2010 |
Detailed Description
|
Advance Technical Information
www.DataSheet4U.com
GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fa...
|
Datasheet
|
IXFN230N20T
|
Overview
Advance Technical Information
www.
DataSheet4U.
com
GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN230N20T
RDS(on) ≤ ≤ trr
VDSS ID25
= =
200V 230A 7.
5mΩ 200ns
miniBLOC, SOT-227 E153432
S G
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
Maximum Ratings 200 200 ±20 ±30 220 200 630 100 3 20 1090 -55 .
.
.
+175 175 -55 .
.
.
+175 V V V V A A A A J V/ns W °C °C °C °C °C V~ V~ Nm...
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