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IXFN230N20T

Part Number	IXFN230N20T
Manufacturer	IXYS
Description	GigaMOS Power MOSFET
Published	Jul 5, 2010
Detailed Description	Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fa...
Datasheet	IXFN230N20T PDF File

Overview

Advance Technical Information www.
DataSheet4U.
com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN230N20T RDS(on) ≤ ≤ trr VDSS ID25 = = 200V 230A 7.
5mΩ 200ns miniBLOC, SOT-227 E153432 S G Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Ratings 200 200 ±20 ±30 220 200 630 100 3 20 1090 -55 .
.
.
+175 175 -55 .
.
.
+175 V V V V A A A A J V/ns W °C °C °C °C °C V~ V~ Nm/lb.
in.
Nm/lb.
in.
g S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal.
Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation voltage 2500 V~ High Current Handling Capab...

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IXFN230N20T GigaMOS Power MOSFET - IXYS

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